BLW86 데이터 시트보기 (PDF) - Philips Electronics

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BLW86

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

AB and B operated h.f. and v.h.f.

transmitters with a nominal supply

voltage of 28 V. The transistor is

resistance stabilized and is

guaranteed to withstand severe load

mismatch conditions. Matched

hFE groups are available on request.

It has a 3/8" flange envelope with a

ceramic cap. All leads are isolated

from the flange.

Product specification

BLW86

QUICK REFERENCE DATA

R.F. performance up to Th = 25 °C

MODE OF

OPERATION

VCE

f

V

MHz

c.w. (class-B)

s.s.b. (class-AB)

s.s.b. (class-A)

28

175

28 1,6 − 28

26 1,6 − 28

PL

W

45

5−47,5 (P.E.P.)

17 (P.E.P.)

Gp

dB

> 7,5

typ. 19

typ. 22

η

%

> 70

typ. 45

−

zi

YL

Ω

mS

0,7 + j1,3 110 − j62

−

−

−

−

d3

dB

−

typ. −30

typ. −42

PIN CONFIGURATION

halfpage

1

2

4

handbook, halfpage

c

b

MBB012

e

3

MSB057

Fig.1 Simplified outline and symbol.

PINNING - SOT123

PIN

DESCRIPTION

1 collector

2 emitter

3 base

4 emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

August 1986

2

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