BLW86 데이터 시트보기 (PDF) - Philips Electronics

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BLW86

HF/VHF power transistor

Philips Electronics 

Philips Semiconductors

HF/VHF power transistor

Product specification

BLW86

APPLICATION INFORMATION

R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C

f (MHz)

175

VCE (V)

28

PL (W)

45

PS (W)

<8

GP (dB)

> 7,5

IC (A)

< 2,47

η (%)

> 70

zi (Ω)

0,7 + j1,3

YL (mS)

110 − j62

handbook, full pagewidth

C1

50 Ω

L1

C3a

,, ,,,, L4

L5

T.U.T.

C6a

L7

C6b

C7

50 Ω

C8

C2

L2

C3b

L6

C4

R1

L3

C5 R2

L8

+VCC

MGP604

Fig.8 Test circuit; c.w. class-B.

List of components:

C1 = C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)

C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)

C3a = C3b = 47 pF ceramic capacitor (500 V)

C4 = 120 pF ceramic capacitor

C5 = 100 nF polyester capacitor

C6a = 2,2 pF ceramic capacitor (500 V)

C6b = 1,8 pF ceramic capacitor (500 V)

C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)

L1 = 14 nH; 1 turn Cu wire (1,6 mm); int. dia. 7,7 mm; leads 2 × 5 mm

L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm

L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)

L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor

L6 = 80 nH; 3 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 8,0 mm; leads 2 × 5 mm

L7 = 62 nH; 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 8,1 mm; leads 2 × 5 mm

L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/6".

R1 = R2 = 10 Ω carbon resistor

Component layout and printed-circuit board for 175 MHz test circuit see Fig.9.

August 1986

6

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