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LM317MT 데이터 시트보기 (PDF) - Fairchild Semiconductor

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LM317MT
Fairchild
Fairchild Semiconductor Fairchild
LM317MT Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Block Diagram
InVpiunt 3
+
-
V olta ge
Re fe re nce
P rote ction
Circ uitry
1
V ad j
Figure 1. Block Diagram
R lim it
2 Vo
Output
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VI - VO
TJ
TSTG
Input-Output Voltage Differential
Operating Junction Temperature Range
Storage Temperature Range
40
V
0 to +125
°C
-65 to +125
°C
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
LM317MT
LM317MDTX /
LM317MDTXM(1),(2)
PD
RθJC
RθJA
Notes:
Power Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Internally Limited
5
-
81
100
1. Thermal resistance test board - size: 76.2 mm x 114.3 mm x 1.6 mm (1S0P),
JEDEC standard: JESD51-3, JESD51-7
2. Assume no ambient airflow
Unit
W
°C/W
°C/W
© 2003 Fairchild Semiconductor Corporation
LM317M Rev. 1.1.0
2
www.fairchildsemi.com

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