SPA11N60C3E8185(2009) 데이터 시트보기 (PDF) - Infineon Technologies

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SPA11N60C3E8185
(Rev.:2009)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP11N60C3

SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

VDS @ Tjmax

RDS(on)

ID

• Periodic avalanche rated

PG-TO220FP PG-TO262

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

23

1

P-TO220-3-31

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

650 V

0.38 Ω

11 A

PG-TO220

Type

Package

Ordering Code Marking

SPP11N60C3

PG-TO220 Q67040-S4395 11N60C3

SPI11N60C3

PG-TO262 Q67042-S4403 11N60C3

SPA11N60C3 PG-TO220FP Q67040-S4408

SPA11N60C3E8185 PG-TO220

11N60C3

11N60C3

Maximum Ratings

Parameter

Symbol

Value

SPP_I

SPA

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=11A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage static

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

Operating and storage temperature

Reverse diode dv/dt 7)

ID

ID puls

EAS

EAR

IAR

VGS

VGS

Ptot

Tj , Tstg

dv/dt

11

111)

7

71)

33

33

340

340

0.6

0.6

11

11

±20

±20

±30

±30

125

33

-55...+150

15

Unit

A

A

mJ

A

V

W

°C

V/ns

Rev. 3 . 2

Page 1

2009-11-27

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