SPA11N60C3E8185(2009) 데이터 시트보기 (PDF) - Infineon Technologies
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SPA11N60C3E8185 Datasheet PDF : 17 Pages
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SPP11N60C3
SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
2
Ω
4V 4.5V 5V
5.5V
6V
1.6
1.4
1.2
1
0.8
6.5V
0.6
8V
20V
0.4
0 2 4 6 8 10 12 14 16 A 20
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
40
A
25°C
32
28
24
150°C
20
16
12
8
4
0
0
2
4
6
8 10 12 V 15
VGS
Rev. 3.2
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
2.1 SPP11N60C3
Ω
1.8
1.6
1.4
1.2
1
0.8
0.6
98%
0.4
typ
0.2
0
-60 -20
20
60 100 °C
180
Tj
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 11 A pulsed
SPP11N60C3
16
V
12
0,2 VDS max
10
0,8 VDS max
8
6
4
2
0
0
Page 7
10 20 30 40 50 nC 70
QGate
2009-11-27
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