2SK2980 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2980 Datasheet PDF : 9 Pages
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2SK2980
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
0.2
ID=1A
0.1
0.5 A
0.2 A
0
2
4
6
8
10
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
2
Pulse Test
1
0.5
VGS = 2.5 V
0.2
4V
0.1
0.05
0.1 0.2
0.5 1
2
5
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
I D = 0.1 A, 0.2 A, 0.5 A
0.4
VGS = 2.5 V
0.3
0.2
0.1 A, 0.2 A, 0.5 A
4V
0.1
0
Pulse Test
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
5
2
Tc = –25 °C
1
25 °C
0.5
75 °C
0.2
0.1
V DS = 10 V
0.05
Pulse Test
0.01 0.02 0.05 0.1 0.2 0.5 1
Drain Current I D (A)
5
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