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2SK2980 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2980
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2980 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
2SK2980
1000
500
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
200
Coss
100
Ciss
50
20
Crss
10
5
0
10
20 30 40
50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
50
20
I
D
=1A
40
16
30
V
DD
= 5 V
12
10 V
V
DS
20
20 V
8
V
GS
10
V
DD
= 20 V
4
10 V
5V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Switching Characteristics
200
100
50
t
d(off)
tr
tf
20
10
t
d(on)
5
2
V
GS
= 4 V, V
DD
= 10 V
PW = 2 µs, duty < 1 %
1
0.1 0.2 0.5 1 2
5 10
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
1.0
0.8
0.6
5V
0.4
V
GS
= 0
0.2
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V
SD
(V)
6
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