HV9910B 데이터 시트보기 (PDF) - Microsemi Corporation
부품명
상세내역
제조사
HV9910B Datasheet PDF : 15 Pages
| |||
HV9910B
TABLE 1-1: ELECTRICAL CHARACTERISTICS (CONTINUED) (SHEET 2 OF 2)1
Symbol Parameter
Note Min Typ Max Units Conditions
Current Sense Comparator
VCS,TH
Current sense pull-in thresh-
old voltage
-
VOFFSET
Offset voltage for LD com-
parator
3
-
TBLANK
Current sense blanking
interval
-
tDELAY Delay to output
-
Oscillator
225
213
250
250
275
287
mV
-40°C < TA < +85°C
TA < +125°C
-12
-
12 mV
150 215 280
145 215 315
-
80 150
0 < TA < +85°C, VLD = VDD,
VCS = VCS,TH + 50mV after
ns
TBLANK
-40 < TA < +125°C, VLD = VDD,
VCS = VCS,TH + 50mV after
TBLANK
ns
VLD = VDD, VCS = VCS,TH +
50mV after TBLANK
fOSC
Oscillator frequency
Gate Driver
-
-
20
80
25
100
30
120
kHz
RT = 1.00MΩ
RT = 226kΩ
ISOURCE
ISINK
tRISE
tFALL
GATE sourcing current
GATE sinking current
GATE output rise time
GATE output fall time
-
165
-
-
mA VGATE = 0V, VDD = 7.5V
-
165
-
-
mA VGATE = VDD, VDD = 7.5V
-
-
30
50
ns CGATE = 500pF, VDD = 7.5V
-
-
30
50
ns CGATE = 500pF, VDD = 7.5V
1 Specifications are TA = 25°C, VIN = 15V unless otherwise noted.
2 Also limited by package-power dissipation limit; Whichever is lower.
3 Applies over the full operating ambient temperature range of -40°C < TA < +125°C.
4 For design guidance only
TABLE 1-2:
THERMAL RESISTANCE
Package
8-Lead SOIC
16-Lead SOIC
θja
101°C/W
83°C/W
DS20005344A-page 4
2015 Microchip Technology Inc.
Share Link: 