2SK1836 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SK1836

Silicon N-Channel MOS FET / High speed power switching

Hitachi -> Renesas Electronics 

2SK1836, 2SK1837

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

K1836

K1837

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

50

A

200

A

50

A

250

W

150

°C

–55 to +150

°C

2

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