A893 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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A893 Datasheet PDF : 5 Pages
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2SA893, 2SA893A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA893
2SA893A
Unit
–90
–120
V
–90
–120
V
–5
–5
V
–50
–50
mA
300
300
mW
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to emitter
breakdown voltage
V(BR)CEO
Collector cutoff current ICBO
DC current transfer ratio hFE*1
2SA893
Min Typ
–90 —
——
——
250 —
Max
—
–0.5
—
800
2SA893A
Min Typ
–120 —
——
——
250 —
Base to emitter voltage VBE
— — –0.75 — —
Collector to emitter
saturation voltage
VCE(sat)
——
–0.5 —
—
Gain bandwidth product fT
— 120 — — 120
Collector output
capacitance
Noise figure
Cob
— 1.8 — — 1.8
NF
— 2 10 — 2
Note: 1. The 2SA893/A is grouped by hFE as follows.
D
E
250 to 500 400 to 800
Max Unit Test conditions
—V
IC = –1 mA, RBE = ∞
— µA
–0.5 µA
800
–0.75 V
–0.5 V
— MHz
— pF
VCB = –75 V, IE = 0
VCB = –100 V, IE = 0
VCE = –12 V,
IC = –2 mA
VCE = –12 V,
IC = –2 mA
IC = –10 mA,
IB = –1 mA
VCE = –12 V,
IC = –2 mA
VCB = –25 V, IE = 0,
f = 1 MHz
10 dB VCE = –6 V,
IC = –50 µA
Rg = 50 kΩ, f = 1 kHz
See characteristic curves of 2SA872 and 2SA872A
2
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