2SA1084 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

부품명

상세내역

제조사

2SA1084

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1083, 2SA1084, 2SA1085

Electrical Characteristics (Ta = 25°C)

2SA1083

2SA1084

2SA1085

Item

Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V(BR)CBO –60 — —

–90 — —

–120 — —

V

IC = –10 µA, IE = 0

Collector to emitter

breakdown voltage

Emitter to base

breakdown voltage

V(BR)CEO –60 — —

–90 — —

–120 — —

V

IC = –1 mA,

RBE = ∞

V(BR)EBO –5

—

—

–5 — —

–5 — —

V

IE = –10 µA, IC = 0

Collector cutoff current ICBO

Emitter cutoff current IEBO

DC current transfer ratio hFE*1

Collector to emitter

saturation voltage

VCE(sat)

Base to emitter voltage VBE

Gain bandwidth product fT

Collector output

Cob

capacitance

— — –0.1 — — –0.1

— — –0.1 — — –0.1

250 — 800 250 — 800

— — –0.2 — — –0.2

— –0.6 — — –0.6 —

— 90 — — 90 —

— 3.5 — — 3.5 —

— — –0.1

— — –0.1

250 — 800

— — –0.2

— –0.6 —

— 90 —

— 3.5 —

µA VCB = –50 V, IE = 0

µA VEB = –2 V, IC = 0

VCE = –12 V,

IC = –2 mA

V IC = –10 mA,

IB = –1 mA

V VCE = –12 V,

IC = –2 mA

MHz VCE = –12 V,

IC = –2 mA

pF VCB = –10 V, IE = 0,

f = 1 MHz

Noise voltage reffered en

to input

— 0.5 — — 0.5 — — 0.5 —

Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by hFE as follows.

D

E

nV/ VCE = –6V,

√Hz IC = –10 mA,

f = 1 kHz,

Rg = 0, ∆f = 1Hz

250 to 500 400 to 800

3

Share Link: