2SD1527 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics

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2SD1527

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1527

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 1000 —

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1

10

—

hFE2

10

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE (sat) —

—

voltage

Gain bandwidth product

fT

—

5

Collector output capacitance Cob

—

5

Max

—

Unit

V

Test conditions

IC = 1 mA, RBE = ∞

—

V

IE = 1 mA, IC = 0

10

µA

—

—

1.2 V

5

V

VCB = 800 V, IE = 0

VCE = 5 V, IC = 10 mA

VCE = 5 V, IC = 100 mA

VCE = 5 V, IC = 100 mA

IC = 300 mA, IB = 60 mA

—

MHz VCE = 20 V, IC = 50 mA

—

pF

VCB = 100 V, IE = 0, f = 1 MHz

Maximum Collector Dissipation Curve

30

20

10

0

50

100

150

Case temperature TC (°C)

Area of Safe Operation

1.0

(50 V, 0.5 A)

TC = 25°C

P

C = 25 W

0.1

DC Operation

(600 V, 0.042 A)

0.01

30

(1,000 V, 0.015 A)

100

300

1,000 3,000

Collector to emitter voltage VCE (V)

2

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