K07N120 데이터 시트보기 (PDF) - Infineon Technologies

부품명

상세내역

제조사

K07N120

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW07N120

td(off)

tf

100ns

td(on)

t

r

10ns

0A

5A

10A 15A 20A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 4 7 Ω,

dynamic test circuit in Fig.E )

100ns

td(off)

td(on)

tr

tf

10ns

-50°C 0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 8A, RG = 4 7Ω,

dynamic test circuit in Fig.E )

000ns

t

d(off)

100ns

tf

td(on)

tr

10ns

0Ω

20Ω 40Ω 60Ω 80Ω 100Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 8A,

dynamic test circuit in Fig.E )

6V

5V

4V

max.

3V

typ.

2V

min.

1V

0V

-50°C

0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.3mA)

Power Semiconductors

6

Jul-02

Share Link: