RD15HVF1(2006) 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC
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RD15HVF1
(Rev.:2006)
(Rev.:2006)
MITSUBISHI ELECTRIC
RD15HVF1 Datasheet PDF : 9 Pages
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD15HVF1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
Ta=+25°C
f=175MHz
Vdd=12.5V
40
Idq=0.5A
100
Po
80
30
ηｄ
60
Gp
20
40
10
0
0
20
Ｉｄｄ
10
20
Pin(dBm)
0
30
Pin-Po CHARACTERISTICS
25
100
Po
20
80
ηd
15
60
10
5
0
0.0
Ta=25°C
40
f=175MHz
Vdd=12.5V
Idq=0.5A
Idd
20
0.5
1.0
Pin(W)
0
1.5
Pin-Po CHARACTERISTICS
50
Ta=+25°C
f=520MHz
Vdd=12.5V
40
Idq=0.5A
100
Po
80
30
60
20
10
0
0
ηｄ
Gp
Ｉｄｄ
10
20
30
Pin(dBm)
40
20
0
40
Pin-Po CHARACTERISTICS
25
100
20
ηd
15
10
5
Po
Idd
80
60
Ta=25°C
f=520MHz
40
Vdd=12.5V
Idq=0.5A
20
0
0
01 234 56
Pin(W)
Vdd-Po CHARACTERISTICS
25
5
Ta=25°C
f=175MHz
20 Pin=0.6W
Idq=0.5A
Zg=ZI=50 ohm
15
10
Po
4
3
Idd
2
5
1
0
0
4
6
8
10
12
14
Vdd(V)
Vdd-Po CHARACTERISTICS
25
5
Ta=25°C
f=520MHz
20 Pin=3W
Idq=0.5A
Zg=ZI=50 ohm
15
Po
4
3
Idd
10
2
5
1
0
0
4
6
8
10
12
14
Vdd(V)
RD15HVF1
MITSUBISHI ELECTRIC
4/9
10 Jan 2006
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