RD15HVF1_11 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

부품명

상세내역

제조사

RD15HVF1_11

Silicon RF Power MOS FET (Discrete) RoHS Compliance, Silicon MOSFET Power Transistor

MITSUBISHI ELECTRIC  

< Silicon RF Power MOS FET (Discrete) >

RD15HVF1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz520MHz,15W

TYPICAL CHARACTERISTICS

Vgs-Ids CHARACTERISTICS 2

10

Vds=10V

-25°C

8 Tc=-25~+75°C

+25°C

6

+75°C

4

2

0

0 2 4 6 8 10

Vgs(V)

TEST CIRCUIT(f=175MHz)

Vgg

Vdd

C1

8.2kOHM

9.1kOHM

L3

100OHM

RF-IN

56pF

56pF

L1

175MHz

L2

RD15HVF1

25pF

25pF

C3

C2

82pF

RF-OUT

25pF 25pF 25pF 7

22

45

62

73

92

100

10pF 25pF 25pF

7

12

40

42

74

95

100

C1:2200pF 10uF in parallel

C2:2200pF*2 in parallel

C3:2200pF,330uF in parallel

Note:Board material PTFE substrate

micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm

Dimensions:mm

L1:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L2:5Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

L3:4Turns,I.D6mm,D1.6mm P=1 silver plateted copper wire

Publication Date : Oct．2011

5

Share Link: