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2SK2929 데이터 시트보기 (PDF) - Hitachi -> Renesas Electronics
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2SK2929
Silicon N Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SK2929 Datasheet PDF : 10 Pages
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2SK2929
Silicon N Channel MOS FET
High Speed Power Switching
Features
•
Low on-resistance
R
DS
=0.026
Ω
typ.
•
High speed switching
•
4V gate drive device can be driven from 5V source
Outline
TO–220AB
ADE-208-552C (Z)
4th. Edition
June 1, 1998
D
G
S
1
2
3
1. Gate
2. Drain(Flange
3. Source
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