K3155 데이터 시트보기 (PDF) - Renesas Electronics

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K3155

Silicon N Channel MOS FET High Speed Power Switching / K3155

Renesas Electronics 

2SK3155

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 100 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

REJ03G1080-0500

(Previous: ADE-208-768C)

Rev.5.00

Sep 07, 2005

RENESAS Package code: PRSS0003AD-A

(Package name: TO-220FM)

D

G

1. Gate

2. Drain

3. Source

12 3

S

Rev.5.00 Sep 07, 2005 page 1 of 7

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