K3155 데이터 시트보기 (PDF) - Renesas Electronics

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K3155

Silicon N Channel MOS FET High Speed Power Switching / K3155

Renesas Electronics 

2SK3155

Absolute Maximum Ratings

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Symbol

VDSS

VGSS

ID

ID(pulse)Note1

IDR

IAP Note3

EAR Note3

Pch Note2

Tch

Tstg

Ratings

150

±20

15

60

15

15

16

30

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Electrical Characteristics

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 150

Gate to source breakdown voltage V(BR)GSS ±20

Gate to source leak current

IGSS

—

Zero gate voltage drain current

IDSS

—

Gate to source cutoff voltage

VGS(off)

1.0

Static drain to source on state

resistance

RDS(on)

—

RDS(on)

—

Forward transfer admittance

|yfs|

8.5

Input capacitance

Ciss

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

Turn-on delay time

td(on)

—

Rise time

tr

—

Turn-off delay time

td(off)

—

Fall time

tf

—

Body–drain diode forward voltage

VDF

—

Body–drain diode reverse recovery

trr

—

time

Note: 4. Pulse test

Typ

—

—

—

—

—

0.10

0.12

14

850

300

160

13

100

195

110

0.9

140

Max

—

—

±10

10

2.5

0.13

0.15

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

(Ta = 25°C)

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 150 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 8 A, VGS = 10 VNote4

ID = 8 A, VGS = 4 V Note4

ID = 8 A, VDS = 10 V Note4

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 8 A, VGS = 10 V,

RL = 3.75 Ω

IF = 15 A, VGS = 0

IF = 15 A, VGS = 0

diF/ dt = 50 A/ µs

Rev.5.00 Sep 07, 2005 page 2 of 7

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