K3155 데이터 시트보기 (PDF) - Renesas Electronics
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K3155 Datasheet PDF : 8 Pages
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2SK3155
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
0.4
5A
0.3
ID = 10 A
0.2
VGS = 4 V
0.1
10 V
0
–40
0
40
10 A 5 A
80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
500
di / dt = 50 A / µs
200
VGS = 0, Ta = 25°C
100
50
20
10
5
0.1 0.2 0.5 1 2
5 10 20
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
200
20
ID = 15 A
160 VDD = 100 V
50 V
25 V
120
VGS
16
12
VDS
80
8
40
VDD = 100 V
4
50 V
25 V
0
0
20 40 60 80 100
Gate Charge Qg (nc)
1000
Forward Transfer Admittance
vs. Drain Current
300
Tc = –25°C
100
30
75°C
1
25°C
0.3
0.1
0.1 0.2 0.5 1 2
VDS = 10 V
Pulse Test
5 10 20 50 100
Drain Current ID (A)
10000
Typical Capacitance
vs. Drain to Source Voltage
3000
1000
Ciss
300
Coss
100
Crss
30 VGS = 0
f = 1 MHz
10
0
10 20 30 40
50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
500
200
100
td(off)
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
tf
50
tr
20
td(on)
10
5
0.1 0.2 0.5 1 2
5 10 20
Drain Current ID (A)
Rev.5.00 Sep 07, 2005 page 4 of 7
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