PSMN3R0-30YLD 데이터 시트보기 (PDF) - NXP Semiconductors.

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PSMN3R0-30YLD

N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors. 

NXP Semiconductors

PSMN3R0-30YLD

N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using

NextPowerS3 Technology

10

VGS

(V)

8

6

4

2

aaa-008338

24 V

15 V

VDS = 6 V

104

C

(pF)

103

102

aaa-008339

Ciss

Coss

Crss

0

0 5 10 15 20 25 30 35 40

QG (nC)

Fig. 13. Gate-source voltage as a function of gate

charge; typical values

10

10-1

1

10

102

VDS (V)

Fig. 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

102

IS

(A)

aaa-008340

ID

(A)

003aal160

10

trr

ta

tb

0

1

150°C

Tj = 25°C

10-1

0

0.2 0.4 0.6 0.8

1

1.2

VSD (V)

Fig. 15. Source current as a function of source-drain

voltage; typical values

0.25 IRM

IRM

t (s)

Fig. 16. Reverse recovery timing definition

PSMN3R0-30YLD

Product data sheet

All information provided in this document is subject to legal disclaimers.

18 February 2014

© NXP N.V. 2014. All rights reserved

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