NE851M13 데이터 시트보기 (PDF) - California Eastern Laboratories.

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NE851M13

NPN SILICON RF TRANSISTOR

California Eastern Laboratories. 

NPN SILICON RF TRANSISTOR

NE851M13 / 2SC5801

NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW NOISE

3-PIN LEAD-LESS MINIMOLD

FEATURES

• Low phase distortion, low voltage operation

• Ideal for OSC applications

• 3-pin lead-less minimold package

ORDERING INFORMATION

Part Number

NE851M13-A

2SC5801-A

NE851M13-T3-A

2SC5801-T3-A

Quantity

50 pcs (Non reel)

10 kpcs/reel

Supplying Form

• 8 mm wide embossed taping

• Pin 2 (Base) face the perforation side of the tape

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

IC

Ptot Note

Tj

Tstg

Ratings

9.0

5.5

1.5

100

140

150

65 to +150

Unit

V

V

V

mA

mW

C

C

Note Mounted on 1.08 cm2  1.0 mm (t) glass epoxy PCB

Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge

Document No. PU10085EJ02V0DS (2nd edition)

Date Published March 2002 CP(K)

The mark  shows major revised points.

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