NE851M13-A 데이터 시트보기 (PDF) - California Eastern Laboratories.

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NE851M13-A

NPN SILICON RF TRANSISTOR

California Eastern Laboratories. 

NE851M13 / 2SC5801

ELECTRICAL CHARACTERISTICS (TA = +25C)

Parameter

DC Characteristics

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

RF Characteristics

Gain Bandwidth Product (1)

Gain Bandwidth Product (2)

Insertion Power Gain (1)

Insertion Power Gain (2)

Noise Figure

Reverse Transfer Capacitance

Symbol

Test Conditions

ICBO VCB = 5 V, IE = 0 mA

IEBO VEB = 1 V, IC = 0 mA

hFE Note 1 VCE = 1 V, IC = 5 mA

fT

VCE = 1 V, IC = 5 mA, f = 2 GHz

fT

VCE = 1 V, IC = 15 mA, f = 2 GHz

S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz

S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz

NF VCE = 1 V, IC = 10 mA, f = 2 GHz,

ZS = Zopt

Cre Note 2 VCB = 0.5 V, IE = 0 mA, f = 1 MHz

Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%

2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank

Marking

hFE Value

FB

E7

100 to 145

MIN. TYP. MAX. Unit

–

–

600

nA

–

–

600

nA

100

120

145

–

3.0

4.5

–

GHz

5.0

6.5

–

GHz

3.0

4.0

–

dB

4.5

5.5

–

dB

–

1.9

2.5

dB

–

0.6

0.8

pF

2

Data Sheet PU10085EJ02V0DS

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