DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

7MBR35SB120 데이터 시트보기 (PDF) - Fuji Electric

부품명
상세내역
제조사
7MBR35SB120 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
7MBR35SB120
IGBT MODULE (S series)
1200V / 35A / PIM
IGBT Modules
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
Symbol
VCES
VGES
IC
ICP
Collector power dissipation
Collector-Emitter voltage
Gate-Emitter voltage
Collector current
-IC
PC
VCES
VGES
IC
ICP
Collector power dissipation
Repetitive peak reverse voltage
Repetitive peak reverse voltage
Average output current
Surge current (Non-Repetitive)
I2t
(Non-Repetitive)
Operating junction temperature
Storage temperature
Isolation between terminal and copper base *2
voltage between thermistor and others *3
Mounting screw torque
PC
VRRM
VRRM
IO
IFSM
I2t
Tj
Tstg
Viso
Condition
Continuous
1ms
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
1 device
Continuous
1ms
1 device
Tc=25°C
Tc=80°C
Tc=25°C
Tc=80°C
50Hz/60Hz sine wave
Tj=150°C, 10ms
half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
Rat ing
1200
±20
50
35
100
70
35
240
1200
±20
35
25
70
50
180
1200
1600
35
360
648
+150
-40 to +125
AC 2500
AC 2500
3.5 *1
Unit
V
V
A
A
A
W
V
V
A
A
W
V
V
A
A
A2s
°C
°C
V
N·m

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]