SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
VBEsat
Base-emitter saturation voltage
IC=-3A; IB=-0.3A
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
VEB=-6V; IC=0
IC=-3A ; VCE=4V
fT
Transition frequency
IE=1A ; VCE=-12V
Product Specification
2SA1103
MIN TYP. MAX UNIT
-100
V
-1.5
V
-1.8
V
-100
µA
-100
µA
50
180
20
MHz
2