2SB1181P(RevC) 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1181P Datasheet PDF : 4 Pages
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Transistors
2SB1260 / 2SB1181 / 2SB1241
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO −80
Collector-emitter breakdown voltage
BVCEO −80
Emitter-base breakdown voltage
BVEBO
−5
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
2SB1260, 2SB1181
82
DC current transfer ratio
hFE
2SB1241
120
Transition frequency 2SB1181
fT
−
2SB1260
−
Output capacitance
Cob
2SB1181, 2SB1241
−
Typ.
−
−
−
−
−
−
−
−
100
20
25
Max.
−
−
−
−1
−1
−0.4
390
390
−
−
−
Unit
V
V
V
µA
µA
V
−
−
MHz
pF
pF
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −60V
VEB= −4V
IC/IB= −500mA/ −50mA
VCE= −3V, IC= −0.1A
VCE= −10V, IE=50mA, f=100MHz
VCB= −10V
IE=0A
f=1MHz
zPackaging specifications and hFE
Package
Type
2SB1260
2SB1241
2SB1181
Code
Basic ordering
hFE unit (pieces)
PQR
QR
PQR
TL
2500
−
−
Taping
TV2
2500
−
−
T100
1000
−
−
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180 120 to 270 180 to 390
zElectrical characteristic curves
−1000
Ta=25°C
VCE= −5V
−100
−10
−1
−0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25°C
−1.0
−4.5mA
−0.8
−4mA
−3.5mA
−0.6
−3mA
−2.5mA
−0.4
−2mA
−1.5mA
−0.2
0
0
−1mA
−0.5mA
IB=0mA
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
500
Ta=25°C
200
VCE= −3V
100
50
−1V
20
10
−1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 −2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current
Rev.C
2/3
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