2SB1181 데이터 시트보기 (PDF) - ROHM Semiconductor
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2SB1181 Datasheet PDF : 3 Pages
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Transistors
2SB1260 / 2SB1181 / 2SB1241
Ta=25˚C
-2
-1
-0.5
-0.2
-0.1
-0.05
IC/IB=20
10
-0.02
-0.01
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
1000
500
Ta=25˚C
VCE=-5V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta=25˚C
f=1MHz
IE=0A
20
10
5
2
1
-0.1 -0.2
-0.5 -1 -2
-5 -10 -20 -50 -100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
1000
500
200
100
50
Ta=25˚C
f=1MHz
IC=0A
20
10
-0.1 -0.2 -0.5 -1 -2
-5 -10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
-2 IC Max. (Pulse)
-1 IC Max.
-0.5
Ta=25˚C
* Single
nonrepetitive
pulse
-0.2
-0.1
-0.05
-0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 8 Safe operating area
(2SB1260)
10
5
2
1
500m
IC Max. (Pulse)
DC
Ta=25˚C
* Single
nonrepetitive
pulse
200m
100m
50m
20m
10m
* 5m Printed circuit board:
2m 1.7 mm thick with collector
1m copper plating at least 1 cm2.
0.1 0.2 0.5 1 2 5 10 20
50 100200 5001000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SB1241)
-5
Ta=25˚C
* Single
-2
nonrepetitive
pulse
-1
-0.5
-0.2
-0.1
-0.05
-0.02
-0.01
-0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area
(2SB1181)
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