11N60F 데이터 시트보기 (PDF) - Fairchild Semiconductor
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11N60F Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FCP11N60F
FCPF11N60F
Device
FCP11N60F
FCPF11N60F
Package
TO-220
TO-220F
Reel Size
--
--
Tape Width
--
--
Quantity
50
50
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA, TJ = 25°C
600
VGS = 0 V, ID = 250 µA, TJ = 150°C
--
∆BVDSS/ Breakdown Voltage Temperature
ID = 250 µA, Referenced to 25°C
--
∆TJ
Coefficient
BVDS
Drain-Source Avalanche Breakdown VGS = 0 V, ID = 11 A
--
Voltage
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
VDS = 480 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250 µA
3.0
VGS = 10 V, ID = 5.5 A
--
gFS
Forward Transconductance
Dynamic Characteristics
VDS = 40 V, ID = 5.5 A
(Note 4)
--
Ciss
Coss
Input Capacitance
Output Capacitance
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
Crss
Reverse Transfer Capacitance
--
Coss
Output Capacitance
VDS = 480 V, VGS = 0 V,
--
f = 1.0 MHz
Coss eff. Effective Output Capacitance
VDS = 0V to 480 V, VGS = 0 V
--
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 300 V, ID = 11 A,
RG = 25 Ω
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS = 480 V, ID = 11 A,
VGS = 10 V
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
--
--
--
(Note 4, 5)
--
--
--
(Note 4, 5)
--
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 11 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 11 A,
dIF / dt = 100 A/µs
--
--
--
--
(Note 4)
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. IAS = 5.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 11A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typ.
--
650
0.6
700
--
--
--
--
--
0.32
9.7
1148
671
63
35
95
34
98
119
56
40
7.2
21
--
--
--
120
0.8
Max. Units
--
--
--
--
10
100
100
-100
V
V
V/°C
V
µA
µA
nA
nA
5.0
V
0.38
Ω
--
S
1490
pF
870
pF
82
pF
--
pF
--
pF
80
ns
205
ns
250
ns
120
ns
52
nC
--
nC
--
nC
11
A
33
A
1.4
V
--
ns
--
µC
2
FCP11N60F/FCPF11N60F Rev. A
www.fairchildsemi.com
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