11N60(2017) 데이터 시트보기 (PDF) - Alpha and Omega Semiconductor
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11N60 Datasheet PDF : 6 Pages
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
16
12
8
4
0
0
1.4
10V
6.5V
6V
VGS=5.5V
5
10
15
20
25
30
VDS (Volts)
Fig 1: On-Region Characteristics
100
VDS=40V
10
-55°C
125°C
1
25°C
0.1
2
4
6
8
10
VGS(Volts)
Figure 2: Transfer Characteristics
3
1.2
2.5
VGS=10V
ID=5.5A
2
1.0
1.5
0.8
VGS=10V
1
0.6
0.5
0.4
0
4
8
12
16
20
24
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
1.2
1.1
1
0.9
0.8
-100 -50
0
50 100 150 200
TJ (°C)
Figure 5:Break Down vs. Junction Temperature
0
-100 -50
0
50 100 150 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
1.0E+4000
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev 1.0: Sepetember 2017
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