2SD1650 데이터 시트보기 (PDF) - SavantIC Semiconductor

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2SD1650

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1650

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(SUS)CEO Collector-emitter sustaining voltage IC=0.1A , IB=0

VCEsat Collector-emitter saturation voltage IC=2.5A ;IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=2.5A ;IB=0.8A

ICBO

Collector cut-off current

VCB=800V; IE=0

ICES

Collector cut-off current

VCES=1500V; RBE==

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=0.5A ; VCE=5V

fT

Transition frequency

IC=0.5A ; VCE=10V

VF

Diode forward voltage

IF=3.5A

MIN TYP. MAX UNIT

800

V

5.0 8.0

V

1.5

V

10

µA

1.0 mA

40

130 mA

8

3

MHz

2.0

V

2

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