10N50C(2006) 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
10N50C Datasheet PDF : 10 Pages
| |||
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250µs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
VGS = 10V
1.0
VGS = 20V
0.5
※ Note : TJ = 25℃
0
5
10
15
20
25
30
35
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
4000
3000
2000
1000
0
10-1
C
oss
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note :
1. V = 0 V
GS
2. f = 1 MHz
C
rss
100
101
V , Drain-Source Voltage [V]
DS
12
V = 100V
DS
10
V = 250V
DS
V = 400V
8
DS
6
4
2
* Note : I = 10A
D
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
3
FQP10N50CF / FQPF10N50CF Rev. A
www.fairchildsemi.com
Share Link: 