PHPT610035NK 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT610035NK Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT610035NK
NPN/NPN high power double bipolar transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current
ICM
peak collector current
single pulse; tp ≤ 1 ms
IB
base current
Ptot
total power dissipation
Tamb ≤ 25 °C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
Tstg
Tamb
junction temperature
storage temperature
ambient temperature
Min Max Unit
-
-
-
-
-
-
[1]
-
[2]
-
[3]
-
100 V
100 V
7
V
3
A
8
A
0.5 A
1
W
2.4 W
25
W
[1]
-
1.25 W
[4]
-
5
W
[2]
-
3
W
-
175 °C
-65 175 °C
-55 175 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[3] Power dissipation from junction to mounting base.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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