PHPT610035NK 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT610035NK Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT610035NK
NPN/NPN high power double bipolar transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
hFE1/hFE2
hFE matching
VCE = 2 V; IC = 1 A
Per transistor
ICBO
collector-base cut-off VCB = 80 V; IE = 0 A; Tamb = 25 °C
current
VCB = 80 V; IE = 0 A; Tj = 150 °C
ICES
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
IEBO
emitter-base cut-off
VEB = 7 V; IC = 0 A; Tamb = 25 °C
current
hFE
DC current gain
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 500 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 3 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
RCEsat
collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 2 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
td
delay time
VCC = 12.5 V; IC = 1 A; IBon = 50 mA;
tr
rise time
IBoff = -50 mA; Tamb = 25 °C
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
Min Typ
0.95 1
Max Unit
1.05
-
-
100 nA
-
-
50
µA
-
-
100 nA
-
-
100 nA
80
150 -
150 250 -
80
250 -
20
100 -
10
40
-
-
90
150 mV
-
225 330 mV
-
75
110 mΩ
-
0.86 1
V
-
1
1.2 V
-
0.67 0.85 V
-
20
-
ns
-
300 -
ns
-
320 -
ns
-
830 -
ns
-
470 -
ns
-
1300 -
ns
© NXP Semiconductors N.V. 2014. All rights reserved
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