PHPT610035NK 데이터 시트보기 (PDF) - NXP Semiconductors.
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PHPT610035NK Datasheet PDF : 16 Pages
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NXP Semiconductors
PHPT610035NK
NPN/NPN high power double bipolar transistor
Symbol
fT
Cc
400
hFE
300
200
100
Parameter
transition frequency
collector capacitance
Conditions
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-010261
3
IB = 50 mA
(1)
45
IC
(A)
40
35
(2)
2
(3)
1
Min Typ Max Unit
-
140 -
MHz
-
11
-
pF
aaa-010267
30
25
20
15
10
5
0
10-1
1
10
102
103
104
IC (mA)
VCE = 10 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4. DC current gain as a function of collector
current; typical values
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
Fig. 5. Collector current as a function of collector-
emitter voltage; typical values
PHPT610035NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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