COMMUTATION CHARACTERISTICS
101
7 TYPICAL EXAMPLE
5
4
3
TC = 125°C
IT = 1A
τ = 500µs
VD = 200V
2
MINIMUM III QUADRANT
100
CHARAC-
TERISTICS
7
VALUE
5
4
3
I QUADRANT
2
10–110–1 2 3 4 5 7 100 2 3 4 5 7 101
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
6Ω
6V
A
6V
A
V
RG
V
RG
TEST PROCEDURE 3 TEST PROCEDURE 4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR1AM-8
LOW POWER USE
PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
7
TYPICAL EXAMPLE
5
4
3
2
102
7
IFGT I
5
IRGT III
4
3
IRGT I
IFGT III
2
101100 2 3 4 5 7 101 2 3 4 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999