MT4C1M16E5TG-5ET 데이터 시트보기 (PDF) - Micron Technology

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MT4C1M16E5TG-5ET

16Mb: 1 MEG x16 EDO DRAM

Micron Technology 

ABSOLUTE MAXIMUM RATINGS*

Voltage on VCC Pin Relative to VSS

3.3V ......................................................... -1V to +4.6V

5V ............................................................... -1V to +7V

Voltage on NC, Inputs or I/O Pins Relative to Vss:

3.3V ......................................................... -1V to +5.5V

5V ............................................................... -1V to +7V

Operating Temperature

TA (commercial) .................................. 0ºC to +70ºC

TA (extended) ................................... -20ºC to +80ºC

Storage Temperature (plastic) ........... -55ºC to +150ºC

Power Dissipation ........................................................ 1W

Short Circuit Output Current ................................ 50mA

16Mb: 1 MEG x16

EDO DRAM

*Stresses greater than those listed under “Absolute

Maximum Ratings” may cause permanent damage to

the device. This is a stress rating only, and functional

operation of the device at these or any other conditions

above those indicated in the operational sections of

this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may

affect reliability.

DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS

(Notes: 1; notes appear on pages 10-11)

PARAMETER/CONDITION

SUPPLY VOLTAGE

INPUT HIGH VOLTAGE:

Valid Logic 1; All inputs, I/Os and any NC

INPUT LOW VOLTAGE:

Valid Logic 0; All inputs, I/Os and any NC

INPUT LEAKAGE CURRENT:

Any input at VIN (0V £ VIN £ VIH[MAX]);

All other pins not under test = 0V

OUTPUT HIGH VOLTAGE:

IOUT = -2mA(3.3V), -5mA(5V)

OUTPUT LOW VOLTAGE:

IOUT = 2mA(3.3V), 4.2mA(5V)

OUTPUT LEAKAGE CURRENT:

Any output at VOUT (0V £ VOUT £ 5.5V);

DQ is disabled and in High-Z state

SYMBOL

VCC

VIH

VIL

II

3.3V

MIN MAX

3.0

3.6

2.0

5.5

-1.0 0.8

-2

2

5V

MIN MAX UNITS NOTES

4.5

5.5

V

2.4 VCC + 1 V

-0.5

0.8

V

-2

2

µA

4

VOH

2.4

–

2.4

–

V

VOL

–

0.4

–

0.4

V

IOZ

-5

5

-5

5

µA

1 Meg x 16 EDO DRAM

D52_B.p65 – Rev. B; Pub. 3/01

6

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc

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