MT4C1M16E5TG-5ET 데이터 시트보기 (PDF) - Micron Technology

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MT4C1M16E5TG-5ET

16Mb: 1 MEG x16 EDO DRAM

Micron Technology 

16Mb: 1 MEG x16

EDO DRAM

ICC OPERATING CONDITIONS AND MAXIMUM LIMITS

(Notes: 1, 2, 3, 5, 8; notes appear on pages 10-11); (VCC[MIN] £ VCC £ VCC[MAX])

PARAMETER/CONDITION

SYMBOL SPEED

STANDBY CURRENT: TTL

(RAS# = CAS# = VIH)

ICC1

ALL

STANDBY CURRENT: CMOS (non-“S” version only)

(RAS# = CAS# = other inputs = VDD - 0.2V)

ICC2

ALL

STANDBY CURRENT: CMOS (“S” version only)

(RAS# = CAS# = other inputs = VDD - 0.2V)

ICC2

ALL

OPERATING CURRENT: Random READ/WRITE

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

ICC3

-5

-6

OPERATING CURRENT: EDO PAGE MODE

Average power supply current (RAS# = VIL, CAS#,

address cycling: tPC = tPC [MIN])

ICC4

-5

-6

REFRESH CURRENT: RAS#-ONLY

Average power supply current

(RAS# cycling, CAS# = VIH: tRC = tRC [MIN])

ICC5

-5

-6

REFRESH CURRENT: CBR

Average power supply current

(RAS#, CAS#, address cycling: tRC = tRC [MIN])

ICC6

-5

-6

REFRESH CURRENT: Extended (“S” version only)

ICC7

ALL

Average power supply current: CAS# = 0.2V or CBR cycling;

RAS# = tRAS (MIN); WE# = VDD - 0.2V; A0-A10, OE# and

DIN = VDD - 0.2V or 0.2V (DIN may be left open); tRC = 125µs

REFRESH CURRENT: Self (“S” version only)

ICC8

ALL

Average power supply current: CBR with RAS# tRASS (MIN)

and CAS# held LOW; WE# = VDD - 0.2V; A0-A10,

OE# and DIN = VDD - 0.2V or 0.2V (DIN may be left open)

3.3V

1

500

150

180

170

140

130

180

170

180

170

300

300

5V UNITS NOTES

2

mA

500 µA

150 µA

190 mA

6

180

150 mA

6

140

190 mA

180

180 mA 7, 9

170

300 µA 7, 9

300 µA 7, 9

1 Meg x 16 EDO DRAM

D52_B.p65 – Rev. B; Pub. 3/01

7

Micron Technology, Inc., reserves the right to change products or specifications without notice.

©2001, Micron Technology, Inc

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