MT4C1M16E5DJ-6ET 데이터 시트보기 (PDF) - Micron Technology
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MT4C1M16E5DJ-6ET Datasheet PDF : 24 Pages
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16Mb: 1 MEG x16
EDO DRAM
AC ELECTRICAL CHARACTERISTICS (continued)
(Notes: 2, 3, 9, 10, 11, 12; notes appear on pages 10-11); (VCC[MIN] £ VCC £ VCC[MAX])
AC CHARACTERISTICS
PARAMETER
OE# setup prior to RAS#
during HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
RAS# pulse width during Self Refresh
Random READ or WRITE cycle time
RAS# to CAS# delay time
READ command hold time (referenced to CAS#)
READ command setup time
Refresh period (1,024 cycles)
Refresh period (1,024 cycles) S version
RAS# precharge time
RAS# to CAS# precharge time
RAS# precharge time exiting Self Refresh
READ command hold time (referenced to RAS#)
RAS# hold time
READ-WRITE cycle time
RAS# to WE# delay time
WRITE command to RAS# lead time
Transition time (rise or fall)
WRITE command hold time
WRITE command hold time (referenced to RAS#)
WE# command setup time
Output disable delay from WE#
WRITE command pulse width
WE# pulse to disable at CAS# HIGH
WE# hold time (CBR Refresh)
WE# setup time (CBR Refresh)
SYMBOL
tORD
-5
MIN MAX
0
-6
MIN MAX
0
UNITS NOTES
ns
tPC
tPRWC
tRAC
tRAD
tRAH
tRAS
tRASP
tRASS
tRC
tRCD
tRCH
tRCS
tREF
tREF
tRP
tRPC
tRPS
tRRH
tRSH
tRWC
tRWD
tRWL
tT
tWCH
tWCR
tWCS
tWHZ
tWP
tWPZ
tWRH
tWRP
20
47
50
9
9
50 10,000
50 125,000
100
84
11
0
0
16
128
30
5
90
0
13
116
67
13
2
50
8
38
0
0
12
5
10
8
8
25
ns 31
56
ns 31
60
ns 19
12
ns 21
10
ns
60 10,000 ns
60 125,000 ns
100
µs
104
ns
14
ns 22, 25
0
ns 23, 27
0
ns
25
16
ms
128 ms
40
ns
5
ns
105
ns
0
ns 23
15
ns 32
140
ns
79
ns 13
15
ns
2
50
ns
10
ns 32
45
ns
0
ns 13, 25
0
15
ns
5
ns
10
ns
10
ns
10
ns
1 Meg x 16 EDO DRAM
D52_B.p65 – Rev. B; Pub. 3/01
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001, Micron Technology, Inc
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