10N50 데이터 시트보기 (PDF) - Unisonic Technologies
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10N50 Datasheet PDF : 6 Pages
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10N50
Preliminary
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Current (Note 3)
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
Peak Diode Recovery dv/dt (Note 5)
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
500
±30
10 (Note2)
40 (Note 2)
10
388
14.3
4.5
V
V
A
A
A
mJ
mJ
V/ns
TO-220
TC=25°C
TO-220F1
Power Dissipation
TO-220
PD
Derate above 25°C
TO-220F1
143
W
48
1.14
W/°C
0.38
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L = 7mH, IAS = 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 10A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F1
TO-220
TO-220F1
SYMBOL
θJA
θJC
RATINGS
62.5
62.5
0.87
2.58
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-531.a
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