18N60G-T47-T 데이터 시트보기 (PDF) - Unisonic Technologies
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18N60G-T47-T Datasheet PDF : 4 Pages
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18N60
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA
600
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±30V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2.0
Static Drain-Source On-Resistance
RDS(ON) VGS=10V, ID=9A (Note)
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-ON Rise Time
Turn-OFF Delay Time
Turn-OFF Fall-Time
Total Gate Charge
Gate Source Charge
Gate Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VGS=10V, VDS=0.5VDSS,
ID=18A, RG=5Ω (External)
VGS=10V, VDS=0.5VDSS, ID=9A
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IF=IS ,VGS=0V (Note )
Maximum Continuous Drain-Source
Diode Forward Current
IS
VGS=0V
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Repetitive
Reverse Recovery Time
trr
VGS=0V, dIF/dt=100A/µs,
Reverse Recovery Charge
QRR
IS=18A, VR=100V
Note: Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
TYP MAX UNIT
V
25 µA
±100 nA
4.0 V
0.36 0.5 Ω
2500
pF
280
pF
23
pF
21
ns
22
ns
62
ns
22
ns
50
nC
15
nC
18
nC
1.5 V
18 A
54 A
200 ns
0.8
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R502-221.H
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