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1N4001GP 데이터 시트보기 (PDF) - General Semiconductor

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1N4001GP
GE
General Semiconductor GE
1N4001GP Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N4001GP THRU 1N4007GP
FIG. 1 - FORWARD CURRENT DERATING CURVE
1.0
60 HZ
RESISTIVE OR
INDUCTIVE LOAD
0.8
0.6
0.4
0.2
0.375” (9.5mm) LEAD LENGTH
0
0
25
50
75
100 125
AMBIENT TEMPERATURE, °C
150 175
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
25
20
15
10
5.0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
TJ=25°C
1
PULSE WIDTH=300µs
1% DUTY CYCLE
0.1
0.01
0.6 0.8
1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
20
TJ=25°C
f=1.0 MHZ
10
Vsig=50mVp-p
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
TJ=100°C
1
0.1
0.01
0
TJ=25°C
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec

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