SST31LF021-70-4E-WH 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST31LF021-70-4E-WH Datasheet PDF : 24 Pages
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EOL Data Sheet
AC CHARACTERISTICS
2 Mbit Flash + 1 Mbit SRAM ComboMemory
SST31LF021 / SST31LF021E
TABLE 9: SRAM MEMORY BANK READ CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V)
SST31LF021-70
SST31LF021E-300
Symbol Parameter
Min
Max
Min
Max
Unit
TRCS
TAAS
TBES
TOES
TBLZS1
TOLZS1
TBHZS1
TOHZS1
TOHS
Read Cycle Time
Address Access Time
Bank Enable Access Time
Output Enable Access Time
BES# to Active Output
Output Enable to Active Output
BES# to High-Z Output
Output Disable to High-Z Output
Output Hold from Address Change
70
300
70
300
70
300
35
150
0
15
0
15
25
30
25
30
0
10
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
ns
ns
ns
ns
ns
ns
ns
ns
ns
T9.4 1137
TABLE 10: SRAM MEMORY BANK WRITE CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V)
SST31LF021-70
SST31LF021E-300
Symbol Parameter
Min
Max
Min
Max
TWCS
Write Cycle Time
70
300
TBWS
Bank Enable to End-of-Write
60
230
TAWS
Address Valid to End-of-Write
60
230
TASTS
Address Set-up Time
0
0
TWPS
Write Pulse Width
60
200
TWRS
Write recovery Time
0
0
TDSS
Data Set-up Time
30
150
TDHS
Data Hold from Write Time
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
T10.4 1137
TABLE 11: FLASH READ CYCLE TIMING PARAMETERS (VDD = 3.0-3.6V)
SST31LF021-70
SST31LF021E-300
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
300
ns
TBE
Bank Enable Access Time
70
300
ns
TAA
Address Access Time
70
300
ns
TOE
Output Enable Access Time
40
150
ns
TBLZ1 BEF# Low to Active Output
0
0
ns
TOLZ1 OE# Low to Active Output
0
0
ns
TBHZ1 BEF# High to High-Z Output
15
60
ns
TOHZ1 OE# High to High-Z Output
15
60
ns
TOH1
Output Hold from Address Change
0
0
ns
T11.3 1137
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2007 Silicon Storage Technology, Inc.
10
S71137-06-EOL
05/07
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