DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1N6690US 데이터 시트보기 (PDF) - Solid State Devices, Inc.

부품명
상세내역
제조사
1N6690US
SSDI
Solid State Devices, Inc. SSDI
1N6690US Datasheet PDF : 2 Pages
1 2
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Instantaneous Forward Voltage Drop
(IF = 20 Adc, 300-500 µs pulse)
Reverse Leakage Current
(Rated VR, 300 µs pulse minimum)
Junction Capacitance
(VR = 10 Vdc, TA = 25ºC, f = 1MHz)
Reverse Recovery Time
(IF = 500 mA, IR = 1A, IRR = 250mA, TA = 25ºC)
Case Outline: Axial
1N6690-1N6693
and
1N6690US-1N6693US
Symbol
TA = 25ºC
VF1
TA = -55ºC
VF2
TA = 25ºC
IR1
TA = 100ºC
IR2
CJ
trr
Max
1.9
2.2
10
2.0
250
75
Units
Vdc
μA
mA
pF
nsec
Surface Mount Square Tab (SMS)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0143D
DOC

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]