25TTS08STRL 데이터 시트보기 (PDF) - Vishay Semiconductors

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25TTS08STRL

Surface Mountable Phase Control SCR, 16 A

Vishay Semiconductors 

25TTS...S High Voltage Series

Vishay High Power Products Surface Mountable Phase

Control SCR, 16 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

Maximum average on-state current

Maximum RMS on-state current

Maximum peak, one-cycle,

non-repetitive surge current

IT(AV)

IRMS

ITSM

Maximum I2t for fusing

I2t

Maximum I2√t for fusing

Maximum on-state voltage drop

On-state slope resistance

Threshold voltage

Maximum reverse and direct leakage current

I2√t

VTM

rt

VT(TO)

IRM/IDM

Holding current

Maximum latching current

Maximum rate of rise of off-state voltage

Maximum rate of rise of turned-on current

IH

IL

dV/dt

dI/dt

TEST CONDITIONS

TC = 93 °C, 180° conduction half sine wave

10 ms sine pulse, rated VRRM applied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated VRRM applied

10 ms sine pulse, no voltage reapplied

t = 0.1 to 10 ms, no voltage reapplied

16 A, TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

25TTS08, 25TTS12

25TTS16

VR = Rated VRRM/VDRM

Anode supply = 6 V,

resistive load, initial IT = 1 A

Anode supply = 6 V, resistive load

VALUES

UNITS

TYP. MAX.

16

25

A

300

350

450

A2s

630

6300

A2√s

1.25

V

12.0

mΩ

1.0

V

0.5

10

- 100 mA

100 150

200

500

V/µs

150

A/µs

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak negative gate voltage

SYMBOL

PGM

PG(AV)

+ IGM

- VGM

Maximum required DC gate current to trigger

IGT

Maximum required DC gate voltage

to trigger

VGT

Maximum DC gate voltage not to trigger

VGD

Maximum DC gate current not to trigger

IGD

TEST CONDITIONS

Anode supply = 6 V, resistive load, TJ = - 10 °C

Anode supply = 6 V, resistive load, TJ = 25 °C

Anode supply = 6 V, resistive load, TJ = 125 °C

Anode supply = 6 V, resistive load, TJ = - 10 °C

Anode supply = 6 V, resistive load, TJ = 25 °C

Anode supply = 6 V, resistive load, TJ = 125 °C

TJ = 125 °C, VDRM = Rated value

VALUES

8.0

2.0

1.5

10

60

45

20

2.5

2.0

1.0

0.25

2.0

UNITS

W

A

V

mA

V

mA

SWITCHING

PARAMETER

Typical turn-on time

Typical reverse recovery time

Typical turn-off time

SYMBOL

tgt

trr

tq

TJ = 25 °C

TJ = 125 °C

TEST CONDITIONS

VALUES

0.9

4

110

UNITS

µs

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For technical questions, contact: diodes-tech@vishay.com

Document Number: 93704

Revision: 20-Jun-08

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