28F016XD-85 데이터 시트보기 (PDF) - Intel
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28F016XD-85 Datasheet PDF : 54 Pages
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28F016XD FLASH MEMORY
E
2.1 Lead Descriptions (Continued)
Symbol
3/5#
VPP
VCC
GND
NC
Type
INPUT
SUPPLY
SUPPLY
SUPPLY
Name and Function
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5.0V operation.
NOTE:
Reading the array with 3/5# high in a 5.0V system could damage the
device. Reference the power-up and reset timings (Section 5.9) for 3/5#
switching delay to valid data.
PROGRAM/ERASE POWER SUPPLY (12.0V ± 0.6V, 5.0V ± 0.5V): For
erasing memory array blocks or writing words into the flash array. VPP =
5.0V ± 0.5V eliminates the need for a 12.0V converter, while connection
to 12.0V ± 0.6V maximizes program/erase performance.
NOTE:
Successful completion of program and erase attempts is inhibited with
VPP at or below 1.5V. Program and erase attempts with VPP between 1.5V
and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious
results and should not be attempted.
DEVICE POWER SUPPLY (3.3V ± 0.3V, 5.0V ± 0.5V):
To switch 3.3V to 5.0V (or vice versa), first ramp VCC down to GND, and
then power to the new VCC voltage.
Do not leave any power pins floating.
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NO CONNECT:
Lead may be driven or left floating.
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