28F016XD-95 데이터 시트보기 (PDF) - Intel
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28F016XD-95 Datasheet PDF : 54 Pages
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28F016XD FLASH MEMORY
E
5.5 DC Characteristics (Continued)
VCC = 5.0V ± 0.5V, TA = 0°C to +70°C
3/5# = Pin Set Low for 5.0V Operations
Sym
Parameter
Notes
ICCW VCC Word Program
1,6
Current
ICCE VCC Block Erase Current
1,6
ICCES VCC Erase Suspend
1,2
Current
IPPS VPP Standby/Read
1
Current
IPPD VPP Deep Power-Down
1
Current
IPPW VPP Word Program
1,6
Current
IPPE VPP Block Erase Current
1,6
IPPES VPP Erase Susp.Current
1
VIL Input Low Voltage
6
VIH Input High Voltage
6
VOL Output Low Voltage
6
VOH1 Output High Voltage
6
VOH2
6
VPPLK VPP Erase/Program Lock
3,6
Voltage
VPPH1 VPP during Program/Erase 3
Operations
VPPH2 VPP during Program/Erase 3
Operations
VLKO VCC Erase/Program Lock
Voltage
Min
–0.5
2.0
0.85
VCC
VCC–
0.4
0.0
4.5
11.4
2.0
Typ
25
25
18
20
2
±1
30
0.2
7
17
5
16
30
5.0
12.0
Max
35
40
25
30
4
± 10
200
5
12
22
10
20
200
0.8
VCC +
0.5
0.45
1.5
5.5
12.6
Unit
Test Condition
mA VPP = 12.0V ± 5%
Word Program in Progress
mA VPP = 5.0V ± 10%
Word Program in Progress
mA VPP = 12.0V ± 5%
Block Erase in Progress
mA VPP = 5.0V ± 10%
Block Erase in Progress
mA RAS#, CAS# = VIH
Block Erase Suspended
µA VPP ≤ VCC
µA VPP > VCC
µA RP# = GND ± 0.2V
mA VPP = 12.0V ± 5%
Word Program in Progress
mA VPP = 5.0V ± 10%
Word Program in Progress
mA VPP = 12.0V ± 5%
Block Erase in Progress
mA VPP = 5.0V ± 10%
Block Erase in Progress
µA Block Erase Suspended
V
V
V VCC = VCC Min
IOL = 5.8 mA
V VCC = VCC Min
IOH = –2.5 mA
V VCC = VCC Min
IOH = –100 µA
V
V
V
V
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