28F128L30 데이터 시트보기 (PDF) - Intel
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28F128L30 Datasheet PDF : 100 Pages
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28F640L30, 28F128L30, 28F256L30
Introduction
This document provides information about the 1.8 Volt Intel StrataFlash® wireless memory with
3-Volt I/O (L30) device. This document describes the L30 flash memory device features, operation,
and specifications.
Nomenclature
1.8 V: VCC voltage range of 1.7 V – 2.0 V (except where noted)
3.0 V Range: VCCQ voltage range of 2.2 V – 3.3 V
VPP = 9.0 V: VPP voltage range of 8.5 V – 9.5 V
Block: A group of bits, bytes or words within the flash memory array that erase simultaneously
when the Erase command is issued to the device. The L30 flash memory device has two block
sizes: 16K-Word, and 64K-Word.
Main block: An array block that is usually used to store code and/or data. Main blocks are larger
than parameter blocks.
Parameter block: An array block that is usually used to store frequently changing data or small
system parameters that traditionally would be stored in EEPROM.
Top parameter device: Previously referred to as a top-boot device, a device with its parameter
partition located at the highest physical address of its memory map. Parameter blocks within a
parameter partition are located at the highest physical address of the parameter partition.
Bottom parameter device: Previously referred to as a bottom-boot device, a device with its
parameter partition located at the lowest physical address of its memory map. Parameter blocks
within a parameter partition are located at the lowest physical address of the parameter partition.
Partition: A group of blocks that share common program/erase circuitry. Blocks within a partition
also share a common status register. If any block within a partition is being programmed or erased,
only status register data (rather than array data) is available when any address within that partition
is read.
Main partition: A partition containing only main blocks.
Parameter partition: A partition containing parameter blocks and main blocks.
Acronyms
CUI: Command User Interface
MLC: Multi-Level Cell
OTP: One-Time Programmable
PLR: Protection Lock Register
PR: Protection Register
RCR: Read Configuration Register
RFU: Reserved for Future Use
SR: Status Register
WSM: Write State Machine
Datasheet
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