MX29F1610MC-10C3 데이터 시트보기 (PDF) - Macronix International

부품명

상세내역

제조사

MX29F1610MC-10C3

16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM

Macronix International 

MX29F1610

16M-BIT [2M x 8/1M x 16] CMOS

SINGLE VOLTAGE FLASH EEPROM

FEATURES

• 5V ±10% write and erase

• JEDEC-standard EEPROM commands

• Endurance:10,000 cycles

• Fast access time: 100/120ns

• Sector erase architecture

- 16 equal sectors of 128k bytes each

- Sector erase time: 150ms typical

• Auto Erase and Auto Program Algorithms

- Automatically erases any one of the sectors or the

whole chip with Erase Suspend capability

- Automatically programs and verifies data at specified

addresses

• Status Register feature for detection of program or

erase cycle completion

• Low VCC write inhibit is equal to or less than 3.2V

GENERAL DESCRIPTION

The MX29F1610 is a 16-mega bit Flash memory organized

as either 1M wordx16 or 2M bytex8. The MX29F1610

includes 16-128KB(131,072) blocks or 16-64KW(65,536)

blocks. MXIC's Flash memories offer the most cost-

effective and reliable read/write non-volatile random

access memory. The MX29F1610 is packaged in 48-pin

TSOP or 44-pin SOP. For 48-pin TSOP, CE2 and RY/

BY are extra pins compared with 44-pin SOP package.

This is to optimize the products (such as solid-state disk

drives or flash memory cards) control pin budget. PWD

is available in 48 -pin TSOP for low power environment.

All the above three pins(CE2,RY/BY and PWD) plus one

extra VCC pin are not provided in 44-pin SOP. It is

designed to be reprogrammed and erased in-system or

in-standard EPROM programmers.

The standard MX29F1610 offers access times as fast

as 100ns, allowing operation of high-speed

microprocessors without wait. To eliminate bus

contention, the MX29F1610 has separate chip

enables(CE1 and CE2), output enable (OE), and write

enable (WE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

• Software and hardware data protection

• Page program operation

- Internal address and data latches for 128 bytes/64

words per page

- Page programming time: 3ms typical

- Byte programming time: 24us in average

• Low power dissipation

- 50mA active current

- 100uA standby current

• CMOS and TTL compatible inputs and outputs

• Two independently Protected sectors

• Deep Power-Down Input

- 1uA ICC typical

• Industry standard surface mount packaging

- 48 lead TSOP, TYPE I

- 44 lead SOP

MX29F1610 uses a command register to manage this

functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining

maximum EPROM compatibility.

To allow for simple in-system reprogrammability, the

MX29F1610 does not require high input voltages for

programming. Five-volt-only commands determine the

operation of the device. Reading data out of the device

is similar to reading from an EPROM.

MXIC Flash technology reliably stores memory contents

even after 10,000 cycles. The MXIC's cell is designed

to optimize the erase and programming mechanisms.

In addition, the combination of advanced tunnel oxide

processing and low internal electric fields for erase and

programming operations produces reliable cycling. The

MX29F1610 uses a 5V ± 10% VCC supply to perform

the Auto Erase and Auto Program algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up

protection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC +1V.

P/N:PM0260

1

This Material Copyrighted by Its Respective Manufacturer

REV. 2.3, APR. 16, 1999

Share Link: