2N3501UB 데이터 시트보기 (PDF) - Microsemi Corporation
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2N3501UB Datasheet PDF : 3 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
RADIATION HARDENED
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/366
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Emitter-Base Cutoff Current
VEB = 4.0Vdc
VEB = 6.0Vdc
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 0.1mAdc, VCE = 10Vdc
2N3498, 2N3500
2N3499, 2N3501
Symbol
IEBO
IC = 1.0mAdc, VCE = 10Vdc
2N3498, 2N3500
2N3499, 2N3501
IC = 10mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3498, 2N3500
2N3499, 2N3501
hFE
2N3498, 2N3500
2N3499, 2N3501
IC = 300mAdc, VCE = 10Vdc
2N3500
2N3501
Min.
20
35
25
50
35
75
40
100
15
20
Max.
Unit
25
ηAdc
10
μAdc
120
300
IC = 500mAdc, VCE = 10Vdc
Collector-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 300mAdc, IB = 30mAdc
IC = 150mAdc, IB = 15mAdc
Base-Emitter Saturation Voltage
IC = 10mAdc, IB = 1.0mAdc
IC = 300mAdc, IB = 30mAdc
IC = 150mAdc, IB = 15mAdc
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Magnitude, Forward Current Transfer Ratio
IC = 20mAdc, VCE = 20Vdc, f = 100MHz
Output Capacitance
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
VEB = 0.5Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
2N3498
2N3499
All Types
2N3498, 3N3499
2N3500, 2N3501
All Types
2N3498, 3N3499
2N3500, 2N3501
2N3498, 2N3499
2N3500, 2N3501
15
20
VCE(sat)
VBE(sat)
Symbol
|hfe|
Cobo
Cibo
Min.
1.5
0.2
Vdc
0.6
0.4
0.8
Vdc
1.4
1.2
Max.
Unit
8.0
10
8.0
pF
80
pF
T4-LDS-0056 Rev. 1 (080812)
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