2N3501 데이터 시트보기 (PDF) - Microsemi Corporation

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2N3501

RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR

Microsemi Corporation 

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

TECHNICAL DATA SHEET

RADIATION HARDENED

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/366

SWITCHING CHARACTERISTICS

Parameters / Test Conditions

Turn-On Time

VEB = 5Vdc; IC = 150mAdc; IB1 = 15mAdc

Turn-Off Time

IC = 150mAdc; IB1 = IB2 = 15mAdc

Symbol

ton

toff

Min.

Max.

Unit

115

ηs

1150

ηs

SAFE OPERATING AREA

DC Tests

TC = +25°C, tr ≥ 10ηs; 1 Cycle, t = 1.0s

Test 1

VCE = 10Vdc, IC = 500mAdc

VCE = 16.67Vdc, IC = 300mAdc

VCE = 10Vdc, IC = 113mAdc

Test 2

VCE = 50Vdc, IC = 100mAdc

VCE = 50Vdc, IC = 23mAdc

Test 3

VCE = 80Vdc, IC = 40mAdc

VCE = 80Vdc, IC = 14mAdc

Clamped Switching

TA = +25°C

Test 1

IB = 85mAdc, IC = 500mAdc

IB = 50mAdc, IC = 300mAdc

2N3498, 2N3499

2N3500, 2N3501

2N3501UB

All Types

2N3501UB

All Types

2N3501UB

2N3498, 2N3499

2N3500, 2N3501

(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%

T4-LDS-0056 Rev. 1 (080812)

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