2N5293 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic
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2N5293 Datasheet PDF : 3 Pages
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
2N5293 2N5295 2N5297
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
2N5293
70
VCEO(SUS)
Collector-emitter
sustioning voltage
2N5295
IC=0.1A ;IB=0
40
V
2N5297
60
VCEsat
VBE
ICEV
ICER
IEBO
Collector-emitter
saturation voltage
2N5293
2N5295
2N5297
IC=0.5A;IB=0.05A
IC=1.0A;IB=0.1A
IC=1.5A;IB=0.15A
2N5293
IC=0.5A ; VCE=4V
Base-emitter on voltage 2N5295
IC=1.0A ; VCE=4V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
2N5297
2N5293/5297
2N5295
2N5293/5297
2N5295
2N5293/5297
IC=1.5A ; VCE=4V
VCE=65V;VBE=1.5V
TC=150℃
VCE=35V;VBE=1.5V
TC=150℃
VCE=50V;RBE=100Ω
TC=150℃
VEB=7V; IC=0
VEB=5V; IC=0
1.0
V
1.1
1.3
V
1.5
0.5
3.0
mA
2.0
5.0
0.5
2.0
mA
1.0 mA
hFE
DC current gain
fT
Transition frequency
2N5293
2N5295
2N5297
IC=0.5A ; VCE=4V
IC=1.0A ; VCE=4V
IC=1.5A ; VCE=4V
IC=0.2A ; VCE=4V
30
120
20
80
0.8
MHz
ton
Turn-on time
2N5293
2N5295
IC=0.5A;IB=0.05A;VCC=30V
IC=1.0A;IB=0.1A;VCC=30V
5.0 μs
toff
Turn-off time
2N5297
2N5293
2N5295
2N5297
IC=1.5A;IB=0.15A;VCC=30V
IC=0.5A;IB=0.05A;VCC=30V
IC=1.0A;IB=0.1A;VCC=30V
IC=1.5A;IB=0.15A;VCC=30V
15
μs
JMnic
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